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MOSFET(Metal Oxide Semiconductor Field Effect Transistor) is a FET used for switching or amplifying signals

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ashishgawade
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ashishgawade
Asked: May 22, 2023In:
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Dear All, We’ve made a class d system, based on IRS2092 CHIPSET. It’s an amp of 2000W system and we use MOSFET of Onsemi FDP51N25. We’re looking to change this to Infineon MOSFET with part number IRFB4332. Please suggest can it’s one to one ...Read more

Dear All,

We’ve made a class d system, based on IRS2092 CHIPSET.

It’s an amp of 2000W system and we use MOSFET of Onsemi FDP51N25.

We’re looking to change this to Infineon MOSFET with part number IRFB4332.

Please suggest can it’s one to one replacement from FDP51N25 TO IRF4332.

Thanks & Regards

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  1. vikas Nagpal

    Hello, The IRFB4332 is a suitable replacement for the FDP51N25 MOSFET in your Class D amplifier system. Both MOSFETs are N- channel devices and have such voltage conditions, with a minimum VDS of 250V. The IRFB4332 has a just lower RDS (ON) value than the FDP51N25, which means it'll dissipate less pRead more

    Hello,

    The IRFB4332 is a suitable replacement for the FDP51N25 MOSFET in your Class D amplifier system. Both MOSFETs are N- channel devices and have such voltage conditions, with a minimum VDS of 250V.

    The IRFB4332 has a just lower RDS (ON) value than the FDP51N25, which means it’ll dissipate less power when conducting. This can potentially result in better effectiveness for your system.

    However, it’s important to note that the IRFB4332 has an advanced pulsed drain current (Id) level of 60A compared to the 51A level of the FDP51N25. This means that if your system operates at very high current levels, you may need to ensure that the IRFB4332 can manage the current without breaking its maximum levels.

    Overall, make sure to double-check the specifications and ensure that the MOSFET can manage the demands of your specific application.

    Thank You

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Alex thomas
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Alex thomas
Asked: December 20, 2022In:
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Hello, I have a problem with the L6498D driver, the high- side doesn’t work designed a driver for a full h- bridge using two L6498D when I activate the LIN input the LVG output is activated and manages to turn ...Read more

Hello, I have a problem with the L6498D driver, the high- side doesn’t work designed a driver for a full h- bridge using two L6498D when I activate the LIN input the LVG output is activated and manages to turn on the low side MOSFET, but when I activate the HIN input I get a strange output of9.6 v on HVG and I’m using 12v at VCC of the L6498D. This strange voltage position always appears, when I always keep the HIN input high or when there’s a PWM in HIN, in both situations the HVG output is always the same,9.6 v.

What could be happening?

 

Thank You

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  1. vikas Nagpal

    Hi, In order to work properly, the bootstrap structure requires LIN to be active, and consequently, the OUT/S1 pin is connected to GND for the time needed to pre-charge the bootstrap capacitor. With an external bootstrap diode, alternately, the circuit topology/load should allow the OUT/S1 pin to goRead more

    Hi,

    In order to work properly, the bootstrap structure requires LIN to be active, and consequently, the OUT/S1 pin is connected to GND for the time needed to pre-charge the bootstrap capacitor.

    With an external bootstrap diode, alternately, the circuit topology/load should allow the OUT/S1 pin to go at GND level (or lower) from time to time in order to achieve the same result.
    Every time HIN is activated, there should be a residual charge/voltage in the bootstrap capacitor which is more advanced than the UVLO turn-on threshold (maximum).

    I hope this answer helps,
    Regards

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